Metalization in various thin film sensors other multilayer and codeposition applications.
Special Features
UHV sputter system for R&D and small scale production (base pressure: 5 X 10-8 Torr within several hours). Automatical process control. Substrate holder with rotational and revolutionary motions. Substrate heating up to 500'C.
Specifications
Wafer capacity: 6 x 4"
Average throughput Up to 11,000 wafers per year
Dimension: 1300L X 1200H X 1400W (mm3) Power: AC 2.8 kW (13.56MHz) for bias
DC 3kW for Pt sputtering
Gas: Ar / O2 /N2
Pump: rotary (980l/min) & turbo (1,500l/s)
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